High-performance extended-gate ion-sensitive field-effect transistors with multi-gate structure for transparent, flexible, and wearable biosensors

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-Performance Flexible Bottom-Gate Organic Field-Effect Transistors with Gravure Printed Thin Organic Dielectric

N. L. Vaklev, Dr. B. V. O. Muir, Dr. D. T. James, Dr. J.-S. Kim, Dr. A. J. Campbell Experimental Solid State Group and the Centre for Plastic Electronics Department of Physics Blackett Laboratory, South Kensington Campus Imperial College London , London SW7 2AZ , UK E-mail: [email protected] Dr. B. V. O. Muir, Dr. J. H. G. Steinke Department of Chemistry RCS1, South Kensington Ca...

متن کامل

Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

متن کامل

Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

متن کامل

Multiple Nanowire Gate Field Effect Transistors

Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub I...

متن کامل

Human dopamine receptor nanovesicles for gate-potential modulators in high-performance field-effect transistor biosensors

The development of molecular detection that allows rapid responses with high sensitivity and selectivity remains challenging. Herein, we demonstrate the strategy of novel bio-nanotechnology to successfully fabricate high-performance dopamine (DA) biosensor using DA Receptor-containing uniform-particle-shaped Nanovesicles-immobilized Carboxylated poly(3,4-ethylenedioxythiophene) (CPEDOT) NTs (DR...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Science and Technology of Advanced Materials

سال: 2020

ISSN: 1468-6996,1878-5514

DOI: 10.1080/14686996.2020.1775477